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Spreading resistance profiling

Known as: SRP 
Spreading resistance profiling (SRP), also known as spreading resistance analysis (SRA), is a technique used to analyze resistivity versus depth in… 
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Related topics

Related topics

6 relations
Electron holeOhmic contactSecondary ion mass spectrometrySemiconductor

Broader (1)

Semiconductor device fabrication

Papers overview

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2014
2014
Library setup for epitaxial layer dopant profile using spreading resistance profiling analysis
The paper describes an approach to establish library for epitaxial layer monitoring using spreading resistance profiling (SRP… 
2013
2013
Experimental and theoretical investigation of phosphorus in-situ doping of germanium epitaxial layers
2011
2011
High n-Type Antimony Dopant Activation in Germanium Using Laser Annealing for $\hbox{n}^{+}/\hbox{p}$ Junction Diode
Highly activated n-type dopant is essential for n+/p germanium diodes which will be in use for source/drain regions in Ge n… 
2010
2010
Profiling N-Type Dopants in Silicon
Variously doped n-type structures (dopant concentration between 1.5*10^16 cm^-3 and 1.5*10^19 cm^-3) on a lightly doped p-type… 
2009
2009
C-V profiling of ultra-shallow junctions using a buried layer with stepped doping
2005
2005
Formation of silicon on plasma synthesized SiOxNy and reaction mechanism
2005
2005
Modeling of boron and phosphorus implantation into (100) Germanium
Boron and phosphorus implants into germanium and silicon with energies from 20 to 320 keV and ion doses from 5/spl times/10/sup… 
2000
2000
Spreading resistance profiling of ultrashallow junction NPN BJT with carrier redistribution effect
The spreading resistance profiling technique, when applied to ultra shallow junctions, requires the solution of the Poisson's… 
1994
1994
Effects of low dose silicon, carbon, and oxygen implantation damage on diffusion of phosphorus in silicon
As device dimensions shrink to submicron levels, good design of ultrashallow junctions has become increasingly important. It is… 
1992
1992
SOI Material Properties Determined by Electrical Characterization
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