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Power-added efficiency

Known as: PAE, Power Added Efficiency 
Power-added efficiency (PAE) is a metric for rating the efficiency of a power amplifier that takes into account the effect of the gain of the… 
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Amplifier

Papers overview

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2010
2010
Analysis of Class DE Amplifier With Nonlinear Shunt Capacitances at Any Grading Coefficient for High $\displaystyle Q$ and 25 $\displaystyle $ % Duty Ratio
This paper gives analytical expressions for the class disruptive effect (DE) amplifier with nonlinear shunt capacitances at any… 
2010
2010
Active Harmonic Load-Pull With Realistic Wideband Communications Signals
A new wideband open-loop active harmonic load–pull measurement approach is presented. The proposed method is based on wideband… 
2009
2009
Effect of Substrate Contact Shape and Placement on RF Characteristics of 45 nm Low Power CMOS Devices
The substrate resistance of 45 nm CMOS devices shows a strong dependence on the distance between the device edge and the… 
2008
2008
A 65nm CMOS 30dBm class-E RF power amplifier with 60% power added efficiency
A 30 dBm single-ended class-E RF power amplifier (PA) is fabricated in 65 nm CMOS technology. The PA is a cascode stage formed by… 
2008
2008
A 2.14 GHz 50 Watt 60% Power Added Efficiency GaN Current Mode Class D Power Amplifier
This paper presents a 50 W current mode class D (CMCD) power amplifier (PA) operating at 2.14 GHz. The PA is implemented using… 
Highly Cited
2004
Highly Cited
2004
Joint optimization of the power-added efficiency and the error-vector measurement of 20-GHz pHEMT amplifier through a new dynamic bias-control method
This paper presents a method for the optimization of the power-added efficiency (PAE), as well as the error-vector measurement… 
2003
2003
An equivalent circuit and modeling method for defected ground structure and its application to the design of microwave circuits
In this article, the equivalent circuit and modeling method for a defected ground structure (DGS) is proposed, to be used in the… 
1997
1997
4H-SiC MESFET with 65.7% power added efficiency at 850 MHz
4H-SiC MESFET's on conducting substrates were fabricated and characterized for large-signal performance over a wide range of gate… 
1993
1993
A 1.8-W, 6-18-GHz HBT MMIC power amplifier with 10-dB gain and 37% peak power-added efficiency
A two-stage 6-18-GHz high-efficiency AlGaAs-GaAs HBT MMIC power amplifier has been designed and tested. At 7-V collector bias… 
Highly Cited
1989
Highly Cited
1989
Very high power-added efficiency and low-noise 0.15- mu m gate-length pseudomorphic HEMTs
0.15- mu m-gate-length double-heterojunction pseudomorphic high electron mobility transistors (HEMTs) for which excellent… 
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