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Power MOSFET

Known as: VDMOS, PowerFET, Super junction 
A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels. Compared… 
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Related topics

Related topics

28 relations
Active rectificationBuck converterCMOSCharge pump

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
Highly Cited
2014
Highly Cited
2014
High Performance Tri-Gate Extremely Thin-Body InAs-On-Insulator MOSFETs With High Short Channel Effect Immunity and $V_{\rm th}$ Tunability
We have investigated the effects of the tri-gate channel structure on electrical properties of extremely thin-body (ETB) InAs-on… 
2012
2012
On–Off Charge–Voltage Characteristics and Dopant Number Fluctuation Effects in Junctionless Double-Gate MOSFETs
Junctionless double-gate (DG) MOSFETs are assessed by analyzing the on-off characteristics of the mobile charge density as a… 
Highly Cited
2011
Highly Cited
2011
GaSb Inversion-Mode PMOSFETs With Atomic-Layer-Deposited $\hbox{Al}_{2}\hbox{O}_{3}$ as Gate Dielectric
GaSb inversion-mode PMOSFETs with atomic-layer-deposited (ALD) Al<sub>2</sub>O<sub>3</sub> as gate dielectric are demonstrated. A… 
Highly Cited
2009
Highly Cited
2009
High-Performance $\hbox{In}_{0.7}\hbox{Ga}_{0.3}\hbox{As}$ -Channel MOSFETs With High-$\kappa$ Gate Dielectrics and $\alpha$-Si Passivation
Long and short buried-channel In0.7Ga0.3As MOSFETs with and without alpha-Si passivation are demonstrated. Devices with alpha-Si… 
Highly Cited
2009
Highly Cited
2009
First experimental demonstration of 100 nm inversion-mode InGaAs FinFET through damage-free sidewall etching
The first well-behaved inversion-mode InGaAs FinFET with gate length down to 100 nm with ALD Al2O3 as gate dielectric has been… 
Highly Cited
2008
Highly Cited
2008
A Unified Analytic Drain–Current Model for Multiple-Gate MOSFETs
In this paper, a unified analytic drain-current model is presented for various kinds of multiple-gate (MG) MOSFETs, including… 
Highly Cited
2007
Highly Cited
2007
Substrate engineering for high-performance surface-channel III-V metal-oxide-semiconductor field-effect transistors
High-performance inversion-type enhancement-mode n-channel In0.65Ga0.35As metal-oxide-semiconductor field-effect transistors… 
2006
2006
Self-Aligned n- and p-channel GaAs MOSFETs on Undoped and P-type Substrates Using HfO2 and Silicon Interface Passivation Layer
In this work, using Si interface passivation layer (IPL) we present the electrical characteristics of TaN/HfO2/GaAs both p-and n… 
Highly Cited
1994
Highly Cited
1994
Suppression of boron penetration in p/sup +/ polysilicon gate P-MOSFETs using low-temperature gate-oxide N/sub 2/O anneal
It has been reported that high-temperature (/spl sim/1100/spl deg/C) N/sub 2/O-annealed oxide can block boron penetration from… 
1986
1986
Hot-carrier generation in submicrometer VLSI environment
Submicrometer MOSFETs may suffer from reliability degradation, which has a strong correlation with substrate current. In order to… 
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