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LEGO Digital Designer
Known as:
LDD
LEGO Digital Designer, or LDD, is a free computer program produced by the LEGO Group as a part of LEGO Design byME. It is available for Mac and…
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Computer-aided design
LDraw
Microsoft Windows
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Highly Cited
2000
Highly Cited
2000
Efficient Monte Carlo device modeling
F. M. Bufler
,
A. Schenk
,
W. Fichtner
2000
Corpus ID: 16416749
A single-particle approach to full-band Monte Carlo device simulation is presented which allows an efficient computation of drain…
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Highly Cited
1995
Highly Cited
1995
Near-far resistant detection of CDMA signals via isolation bit insertion
F. Zheng
,
S. Barton
IEEE Transactions on Communications
1995
Corpus ID: 40112095
This paper presents a novel scheme for near-far resistant CDMA detection: isolation bit insertion (IBI). At the transmitter…
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1992
1992
GMSK with Frequency-Selective Rayleigh Fading and Cochannel Interference
I. Korn
IEEE J. Sel. Areas Commun.
1992
Corpus ID: 41110521
The author derives a formula for error probability of partial-response continuous-phase modulation with differential phase…
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Highly Cited
1987
Highly Cited
1987
Gate-voltage-dependent effective channel length and series resistance of LDD MOSFET's
G. J. Hu
,
Chi Chang
,
Yu-Tai Chia
IEEE Transactions on Electron Devices
1987
Corpus ID: 1924987
A measurement algorithm to extract the effective channel length and source-drain series resistance of MOSFET's is presented. This…
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Highly Cited
1987
Highly Cited
1987
A model for the electric field in lightly doped drain structures
K. Mayaram
,
Jack C. Lee
,
Chenming Hu
IEEE Transactions on Electron Devices
1987
Corpus ID: 20430596
A semi-quantitative model for the lateral channel electric field in LDD MOSFET's has been developed. This model is derived from a…
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1986
1986
A novel submicron LDD transistor with inverse-T gate structure
Tiao-Yuan Huang
,
W. Yao
,
R. Martin
,
A. Lewis
,
M. Koyanagi
,
J. Chen
International Electron Devices Meeting
1986
Corpus ID: 32330769
A novel submicron LDD transistor is demonstrated in which there is a thin extension of the gate polysilicon under the oxide…
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Highly Cited
1984
Highly Cited
1984
Structure-enhanced MOSFET degradation due to hot-electron injection
F. Hsu
,
H. Grinolds
IEEE Electron Device Letters
1984
Corpus ID: 44995269
Device degradation due to channel hot-electron injection in several nonconventional MOSFET structures including minimum-overlap…
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Highly Cited
1984
Highly Cited
1984
A capacitance method to determine channel lengths for conventional and LDD MOSFET's
B. Sheu
,
P. Ko
IEEE Electron Device Letters
1984
Corpus ID: 24312571
A simple method for determining the channel length and in situ gate-oxide thickness of MOSFETs is described. The method is based…
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Highly Cited
1984
Highly Cited
1984
Accuracy of an effective channel length/External resistance extraction algorithm for MOSFET's
S. Laux
IEEE Transactions on Electron Devices
1984
Corpus ID: 10562560
The accuracy of an effective channel length/external resistance extraction algorithm for MOSFET's is assessed. This is…
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Highly Cited
1982
Highly Cited
1982
Fabrication of high-performance LDDFET's with Oxide sidewall-spacer technology
P. J. Tsang
,
S. Ogura
,
W. Walker
,
J. Shepard
,
D. Critchlow
IEEE Transactions on Electron Devices
1982
Corpus ID: 27860057
A fabrication process for the Lightly Doped Drain/Source Field-Effect Transistor, LDDFET, that utilizes RIE produced SiO2sidewall…
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