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Hot-carrier injection
Known as:
Hot carrier
, Hot carriers injection
, Hot-carrier cell
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Hot carrier injection (HCI) is a phenomenon in solid-state electronic devices where an electron or a “hole” gains sufficient kinetic energy to…
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Related topics
Related topics
15 relations
Charge trap flash
EPROM
Electromigration
Electron hole
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Papers overview
Semantic Scholar uses AI to extract papers important to this topic.
Highly Cited
2001
Highly Cited
2001
Data retention behavior of a SONOS type two-bit storage flash memory cell
W. Tsai
,
N. Zous
,
+6 authors
S. Gu
International Electron Devices Meeting. Technical…
2001
Corpus ID: 34486471
Data retention loss mechanisms in a 2-bit SONOS type flash EEPROM cell with hot electron programming and hot hole erase are…
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Highly Cited
2001
Highly Cited
2001
Origin of electric field enhancement in field emission from amorphous carbon thin films
J. D. Carey
,
R. D. Forrest
,
S. Silva
2001
Corpus ID: 10213870
The observation of electron emission from amorphous carbon thin films at low applied electric fields is explained in terms of an…
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Highly Cited
2001
Highly Cited
2001
Characterization of channel hot electron injection by the subthreshold slope of NROM/sup TM/ device
E. Lusky
,
Y. Shacham-Diamand
,
I. Bloom
,
B. Eitan
IEEE Electron Device Letters
2001
Corpus ID: 20676024
Channel hot electron (CHE) injection, is widely used as main programming method in flash products. The spatial distribution could…
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2000
2000
Ultrafast interferometric pump–probe correlation measurements in systems with broadened bands or continua
M. Weida
,
S. Ogawa
,
H. Nagano
,
H. Petek
2000
Corpus ID: 16683815
Ultrafast (femtosecond) interferometric pump–probe techniques can be used to measure rates of population and quantum phase decay…
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Highly Cited
1987
Highly Cited
1987
Two-dimensional hot-electron models for short-gate-length GaAs MESFET's
C. Snowden
,
D. Loret
IEEE Transactions on Electron Devices
1987
Corpus ID: 24380504
A detailed hot-electron device model suitable for modeling short-gate-length GaAs MESFET's is described. A two-dimensional…
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Highly Cited
1987
Highly Cited
1987
Hot-electron effects in Silicon-on-insulator n-channel MOSFET's
J. Colinge
IEEE Transactions on Electron Devices
1987
Corpus ID: 41702799
Hot-electron degradation has been measured in short-channel bulk and SOI MOSFET's. The presence of a floating substrate in the…
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Highly Cited
1984
Highly Cited
1984
Structure-enhanced MOSFET degradation due to hot-electron injection
F. Hsu
,
H. Grinolds
IEEE Electron Device Letters
1984
Corpus ID: 44995269
Device degradation due to channel hot-electron injection in several nonconventional MOSFET structures including minimum-overlap…
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Highly Cited
1984
Highly Cited
1984
Temperature dependence of hot-electron-induced degradation in MOSFET's
F. Hsu
,
K. Chiu
IEEE Electron Device Letters
1984
Corpus ID: 28651557
The temperature dependence of MOSFET degradation due to hot-electron injection has been studied. The slower degradation rate at…
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Highly Cited
1981
Highly Cited
1981
Hot-electron injection into the oxide in n-channel MOS devices
B. Eitan
,
D. Frohman-Bentchkowsky
IEEE Transactions on Electron Devices
1981
Corpus ID: 30970396
In recent years, interest in hot-electron injection current in MOS devices has increased due to advances in device concepts and…
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Highly Cited
1970
Highly Cited
1970
Hot electron microwave generators
John Millar Carroll
1970
Corpus ID: 136734896
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