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Dangling bond

Known as: Dangling bonds 
In chemistry, a dangling bond is an unsatisfied valence on an immobilized atom. An atom with a dangling bond is also referred to as an immobilized… 
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Related topics

Related topics

5 relations
Computational chemistrySemiconductor deviceSurface statesThermal oxidation

Broader (1)

Solid-state chemistry

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
Highly Cited
2011
Highly Cited
2011
Optimization of the $\hbox{Al}_{2}\hbox{O}_{3}/ \hbox{GaSb}$ Interface and a High-Mobility GaSb pMOSFET
While there have been many demonstrations on n-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) in III-V… 
Highly Cited
2008
Highly Cited
2008
Dispersive Transport and Negative Bias Temperature Instability: Boundary Conditions, Initial Conditions, and Transport Models
Negative bias temperature instability (NBTI) has evolved into one of the most serious reliability concerns for highly scaled… 
2006
2006
Effects of Switched-bias Annealing on Charge Trapping in HfO$_{2}$ Gate Dielectrics
Charge trapping characteristics are investigated for MOS capacitors with 6.8 nm HfO2 layers and 1.0 nm interfacial silicon… 
Highly Cited
2003
Highly Cited
2003
Magnetic properties of substitutional 3d transition metal impurities in silicon carbide
Using the linearized muffin-tin orbital (LMTO) method within both the atomic sphere approximation and full potential (FP… 
Highly Cited
2002
Highly Cited
2002
Ion-irradiation-induced defects in bundles of carbon nanotubes
Review
2001
Review
2001
Nanotubes from Inorganic Materials
The inorganic analogs of carbon fullerenes and nanotubes, like MoS2 and BN, are reviewed. It is argued that nanoparticles of 2D… 
1999
1999
Reconstructed oxide structures stable in air: Silicate monolayers on hexagonal SiC surfaces
Ultrathin oxide layers on hexagonal SiC surfaces were studied using low-energy electron diffraction (LEED) and Auger electron… 
Highly Cited
1999
Highly Cited
1999
Dissociative Adsorption of H2 on Si(100) Induced by Atomic H
We report the observation of H2 adsorption on the H Si 100 surface using scanning tunneling microscopy. Predosing the surface by… 
Highly Cited
1998
Highly Cited
1998
Electronic structure of benzene adsorbed on single-domain Si(001)-(2×1): A combined experimental and theoretical study
Benzene adsorption on a single-domain Si(001)-(2×1) surface has been studied by thermal desorption spectroscopy (TPD) and angle… 
Highly Cited
1977
Highly Cited
1977
Photoluminescence of hydrogenated amorphous silicon
Amorphous silicon obtained by the glow‐discharge decomposition of silane can contain on the order of 18–50 at.% of hydrogen… 
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