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Atomic layer deposition

Known as: ALD 
Atomic layer deposition (ALD) is a thin film deposition technique that is based on the sequential use of a gas phase chemical process. ALD is… 
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Related topics

Related topics

21 relations
Atomic layer epitaxyAtomic layer etchingChemical vapor depositionCombustion chemical vapor deposition

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
Highly Cited
2014
Highly Cited
2014
A simple approach to the fabrication of fluorine-doped zinc oxide thin films by atomic layer deposition at low temperatures and an investigation into the growth mode
A simple low-temperature fabrication of fluorine-doped ZnO (ZnO:F) thin films by atomic layer deposition (ALD) was investigated… 
Highly Cited
2012
Highly Cited
2012
Passivation Properties of Atomic-Layer-Deposited Hafnium and Aluminum Oxides on Si Surfaces
This paper studies the chemical and field effect passivation properties of silicon surfaces by thin hafnium oxide (HfO<sub>2</sub… 
Highly Cited
2011
Highly Cited
2011
InGaAs Tunneling Field-Effect-Transistors With Atomic-Layer-Deposited Gate Oxides
In<sub>0.7</sub>Ga<sub>0.3</sub>As tunneling field-effect-transistors (TFETs) using the p<sup>+</sup> (6 nm)/undoped (6 nm… 
Highly Cited
2010
Highly Cited
2010
Steady-state and transient photoconductivity in c-axis GaN nanowires grown by nitrogen-plasma-assisted molecular beam epitaxy
Analysis of steady-state and transient photoconductivity measurements at room temperature performed on c-axis oriented GaN… 
Highly Cited
2009
Highly Cited
2009
First experimental demonstration of 100 nm inversion-mode InGaAs FinFET through damage-free sidewall etching
The first well-behaved inversion-mode InGaAs FinFET with gate length down to 100 nm with ALD Al2O3 as gate dielectric has been… 
Highly Cited
2007
Highly Cited
2007
Enhancement-mode InP n-channel metal-oxide-semiconductor field-effect transistors with atomic-layer-deposited Al2O3 dielectrics
Enhancement-mode (E-mode) n-channel InP metal-oxide-semiconductor field-effect transistors (MOSFETs) with 0.75–40μm gate length… 
Highly Cited
2007
Highly Cited
2007
Spatially controlled atomic layer deposition in porous materials
We describe a technique for depositing materials at controlled depths within porous substrates based upon the passivating effect… 
Highly Cited
2005
Highly Cited
2005
Low‐Temperature Growth of SiO2 Films by Plasma‐Enhanced Atomic Layer Deposition
Silicon dioxide (SiO2) films prepared by plasma‐enhanced atomic‐layer deposition were successfully grown at temperatures of 100… 
Highly Cited
2004
Highly Cited
2004
Atomic layer deposition of high-/spl kappa/ dielectric for germanium MOS applications - substrate
In this letter, we present the use of atomic layer deposition (ALD) for high-/spl kappa/ gate dielectric formation in Ge MOS… 
2000
2000
Analysis of a transient region during the initial stage of atomic layer deposition
In atomic layer deposition (ALD), it is well known that a linear relationship exists between the deposited film thickness and the… 
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